to-264 t-max ? 050-5850 rev a 3-2006 g d s b2vfr lvfr 400v 57a 0.070 ?? ?? ? apt40m70b2vfr apt40m70lvfr APT40M70B2VFRG* apt40m40lvfrg* * g denotes rohs compliant, pb free terminal finish. power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. t-max? or to-264 package avalanche energy rated faster switching lower leakage power mos v ? fredfet fast recovery body diode characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 400 57 0.070 250 1000 100 24 apt40m70b2_lvfr(g) 400 57 228 3040 520 4.16 -55 to 150 300 5750 2500 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com downloaded from: http:///
050-5850 rev a 3-2006 dynamic characteristics apt40m70b2_lvfr(g) source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -57a) peak diode recovery dv / dt 5 reverse recovery time(i s = -57a, di / dt = 100a/s) reverse recovery charge(i s = -57a, di / dt = 100a/s) peak recovery current(i s = -57a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 57 228 1.3 15 t j = 25c 250 t j = 125c 500 t j = 25c 1.6 t j = 125c 5.5 t j = 25c 15 t j = 125c 27 symbol r jc r ja min typ max 0.24 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.54mh, r g = 25 ? , peak i l = 57a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 57a di / dt 700a/s v r 400v t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 200v i d = 57a @ 25c v gs = 15v v dd = 200v i d = 57a @ 25c r g = 0.6 ? min typ max 7410 8890 1140 1600 450 675 330 495 40 40 125 190 16 32 16 32 55 80 51 0 unit pf nc ns characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
050-5850 rev a 3-2006 typical performance curves apt40m70b2_lvfr(g) 05 01 0 01 5 02 0 0 02468 02468 04 08 01 2 01 6 02 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 100 8060 40 20 0 1.81.6 1.4 1.2 1.0 0.8 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 100 8060 40 20 0 100 8060 40 20 0 6050 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 5v 4.5v 4v v gs =6v, 7v, 10v & 15v v gs =15v v gs =10v v gs =20v t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c v gs =6v & 7v 5.5v 5v 4.5v 4v 5.5v v gs =10v normalized to v gs = 10v @ 0.5 i d [cont.] v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) downloaded from: http:///
050-5850 rev a 3-2006 apt40m70b2_lvfr(g) 1 5 10 50 100 400 .01 .1 1 10 50 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 t c =+25c t j =+150c single pulse 300100 5010 51 .5.1 2016 12 84 0 operation here limited by r ds (on) t j =+150c t j =+25c c rss c oss c iss 30,00010,000 5,0001,000 500100 200 100 5010 51 v ds =200v v ds =80v v ds =320v i d = i d [cont.] 10s1ms 10ms 100ms dc 100s v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline (b2vfr) to-264 (l) package outline (lvfr) e1 sac: tin, silver, copper e1 sac: tin, silver, copper downloaded from: http:///
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